HOAP10H4D2S

HOAP10H4D2S

High Voltage MOSFET

Package:SOT-23

Product features:

  • Advanced trench technology
  • low RDS(ON)and low gate charge
  • high input impedance,low nosie,good thermail stability
  • simple manufacturing process,strong anti-radiation
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Product parameter:

  • VDS:100
  • VGS:20
  • IDS:0.27
  • PD:0.44
  • RDS(10V):4200
  • RDS(4.5V):-
  • RDS(2.5V):-
  • VGS Max:3

Product application:

  • Switching power,various equiment circuits

Terminal product:

  • power bank, automatic control, smart socket, multimeter