The performance parameters of MOSFETs are crucial for selection, and it is the control of key process parameters that determines their performance. As a national high-tech enterprise, Heketai has delved into the synergy of planar and trench processes, and is committed to making breakthroughs in core parameters such as oxide layer thickness, channel length, and doping concentration. Nowadays, Heketai's MOSFETs are widely used in automotive electronics and consumer electronics.

Oxide Layer Thickness

The thickness of the oxide layer directly affects the threshold voltage of the MOSFET. The thinner the oxide layer, the lower the threshold voltage, showing a positive correlation. Consequently, the on-resistance of the device becomes smaller and the switching speed becomes faster. However, it also brings problems such as increased gate leakage current and reduced reliability. In planar processes, Heketai controls the oxide layer thickness at 12-15nm (e.g., HKTD4N65) through chemical vapor deposition technology, ensuring long-term stability under high voltage resistance. The trench process with an ultra-thin oxide layer design significantly reduces the on-resistance, thus meeting the stringent energy efficiency requirements of high-frequency switching power supplies.

Channel Length

Channel length is a key parameter determining switching speed. The short-channel effect caused by excessively small channel length will lead to more leakage current, low breakdown voltage of the device, as well as increased manufacturing difficulty and cost. Therefore, it is necessary to balance performance and cost. Heketai has introduced ASM fully automatic lithography equipment, combined with SGT (Shielded Gate Trench) process and deep trench etching technology. With the support of advanced lithography technology and processes, the impact of the short-channel effect can be minimized as much as possible.

Doping Concentration

The regulation of doping concentration can change the concentration and mobility of carriers, thereby accurately adjusting performance parameters such as on-resistance and breakdown voltage, which is the core principle of customized performance of MOSFETs. The super-junction process achieves a 50% improvement in energy efficiency compared with traditional planar MOSFETs through multi-layer epitaxy and deep trench filling technology. In high-voltage MOSFETs, increasing the doping concentration in the drain region can increase the breakdown voltage; in MOSFETs with low on-resistance, increasing the doping concentration in the channel region can reduce the on-resistance.

Simulation Technology

Before the actual production of MOSFETs, simulation technology can be used to simulate and predict their performance. The simulation process can shorten the research and development cycle, reduce costs, and identify potential problems. In addition to simulation technology, manufacturers like Heketai also use X-RAY detectors and ultrasonic scanners to obtain accurate physical parameters.

Conclusion

A deep understanding of the process parameters of MOSFETs has enabled Heketai to produce customizable and highly reliable MOSFET products. Heketai has established a full-process quality control system and obtained ISO9001, ISO14001, and IATF16949 quality management system certifications, which have helped Heketai's MOSFET products form a complete layout with various types, levels, and application fields. The MOSFETs cover from low voltage to high voltage, and from consumer electronics to industrial applications, providing solutions with both reliability and cost advantages.

Company Introduction

Founded in 1992, Heketai is a professional high-tech and specialized enterprise integrating R&D, design, production, and sales of components. It focuses on providing cost-effective component supply and customization services to meet the R&D needs of enterprises.

Product Supply Categories: Covering semiconductor packaging materials, passive components such as resistors/capacitors/inductors; as well as MOSFETs, TVS, Schottky diodes, voltage regulators, fast recovery diodes, bridge rectifiers, diodes, triodes, power devices, power management ICs, etc., providing one-stop procurement for R&D and production needs.

Two Intelligent Manufacturing Centers: The manufacturing centers in South China and Southwest China (Huizhou: 75,000㎡ + Nanchong: 35,000㎡) are equipped with more than 3,000 advanced equipment and testing instruments. In 2024, 3 new semiconductor material subsidiaries were added to control production capacity and delivery efficiency from the source.

Providing Packaging and Testing OEM Services: Supporting sample customization and small-batch trial production, combined with more than 100 patented technologies and ISO9001, IATF16949 certification systems, to ensure that "quality first" runs through every step from R&D to delivery.

Heketai always takes "customer first, innovation-driven" as its core, providing stable and reliable components for enterprises.

(Attachment: Sample application / solution consultation / small-batch procurement ↓)



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