For forward switching power supplies, most power supplies above 100W that we commonly see use half-bridge or LLC topology circuits. How can we extend the product quality of stage lighting power supplies using half-bridge circuits from the perspective of circuit design?

This issue is probably quite important for stage lighting power supply manufacturers. Today, Hekote Semiconductor will answer the question of which MOSFET type should be used to adapt to the circuit for half-bridge circuits of stage lighting power supplies above 100W.

Actually, for half-bridge circuits of stage lighting power supplies above 100W, we recommend using 2 HKTD120N04. After all, HKTD120N04 is a cost-effective domestic model that can replace MOSFETs such as IRF3205.

Why can HKTD120N04 be a replacement?

Because HKTD120N04 has ultra-low on-resistance (typical value 1.7mΩ), high avalanche energy (70mJ), fast switching characteristics (turn-on delay 15ns), 100% avalanche tested, 100% DVDS thermal resistance tested, 100% EAS tested, RoHS compliant, 100% RG tested, high dv/dt immunity (±50V/ns), good parameter consistency, and high reliability, making it an industrial-grade product.

From the above characteristics, this industrial-grade 120A, 40V field-effect transistor is very suitable for low-voltage side half-bridge circuits of stage lighting power supplies above 100W (such as DC-DC conversion modules, electronic ballast driver stages).

Of course, in practical applications, R&D engineers must understand the detailed parameters of this high-quality domestic field-effect transistor:

HKTD120N04

Electrical characteristics: 120A continuous current, 40V voltage rating

On-resistance: RDS(ON)=1.7mΩ(TYP) @VGS=10V, ID=50A

RDS(ON)=2.6mΩ(MAX) @VGS=10V, ID=50A

Gate-source voltage: VGS=±20V

Package type: TO-252 (surface mount, optimized heat dissipation path)

HKTD120N04 is an N-channel enhancement mode (VDMOS) field-effect transistor. In addition to stage lighting power supplies, it can also be applied to the secondary side of high-frequency switching power supplies, low-voltage inverters, and motor drives, and can directly replace international brands.

Stage lighting power supply application scheme

In stage lighting power supplies with 380V/220V input, after AC-DC rectification and filtering, the voltage is stepped down to below 40V DC bus through an isolation transformer. At this time, it is recommended to use 2 HKTD120N04 in the half-bridge circuit (one for the upper bridge arm and one for the lower bridge arm), combined with an RCD snubber circuit, which can achieve:

Efficiency improvement: 35% reduction in conduction loss compared to traditional schemes

Heat dissipation optimization: TO-252 package with 2oz copper clad, junction temperature reduced by 15℃

Reliability enhancement: Wide temperature operating range of -55℃~+150℃

Key design considerations

The gate drive voltage should be stabilized at 10V±1V to avoid gate oxide layer damage caused by over-driving

The source loop should be short and thick during layout to reduce parasitic inductance

It is recommended to parallel a 0.1μF ceramic capacitor to suppress dv/dt noise

To sum up, for the half-bridge circuit of stage lighting power supplies above 100W, selecting Hekote HKTD120N04 field-effect transistor can not only meet the requirements of low-voltage and high-current scenarios but also reduce supply chain risks through domestic substitution, making it a cost-effective optimal solution.

Company introduction

Founded in 1992, Hekote is a professional high-tech and specialized enterprise integrating R&D, design, production, and sales of components. It focuses on providing cost-effective component supply and customization services to meet enterprise R&D needs.

Product supply categories: Covering semiconductor packaging materials, passive components such as resistors/capacitors/inductors; as well as MOSFETs, TVS, Schottky diodes, voltage regulators, fast recovery diodes, bridge rectifiers, diodes, triodes, power devices, power management ICs, etc., providing one-stop procurement for R&D and production needs.

Two intelligent manufacturing centers: South China and Southwest manufacturing centers (Huizhou 75,000㎡ + Nanchong 35,000㎡) are equipped with more than 3,000 sets of advanced equipment and testing instruments; in 2024, 3 new semiconductor material subsidiaries were added to control production capacity and delivery efficiency from the source.

Providing packaging and testing OEM foundry services: Supporting sample customization and small-batch trial production, combined with more than 100 patented technologies and ISO9001, IATF16949 certification systems, so that "quality first" runs through every link from R&D to delivery.

Hekote always takes "customer first, innovation-driven" as its core, providing stable and reliable components for enterprises.

(Attachment: Sample application / scheme consultation / small-batch procurement ↓)

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Email: hkt@heketai.com

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