Introduction

——Evolution of Data Center Power Supply Architectures and the Core Role of 48V Systems

With the explosive growth in computing power demand of data centers, high-efficiency power supply architectures have become the key to improving the energy efficiency of entire server racks. When traditional 12V power supply architectures face server power consumption at the kilowatt (kW) level, line losses and heat dissipation pressures caused by high-current transmission have become increasingly prominent. Through the "voltage boost to reduce current" strategy, 48V systems reduce the current to 25% of that in 12V solutions under the same power output. Based on power consumption principles, line losses can be reduced by approximately 94%, providing a low-loss, long-distance power supply solution for high-density computing scenarios.

Totem-Pole PFC + LLC Topology

1. MOSFET Performance Requirements for PFC and LLC Circuits

In totem-pole PFC circuits, MOSFETs must meet three core requirements: avalanche energy capability (to handle inrush current during startup), high-frequency switching performance (to reduce switching losses), and low on-resistance (to minimize continuous conduction losses). In the selection table, the 650V 70mΩ model is suitable for high-power scenarios, while the 99mΩ model achieves cost optimization in medium-to-low power scenarios.

LLC resonant circuits reduce losses through a soft-switching mechanism, which imposes strict requirements on the body diode characteristics of secondary-side MOSFETs: low reverse recovery charge (Qrr) reduces switching losses, and high di/dt capability enhances circuit reliability. In 48V output scenarios, synchronous rectifier MOSFETs must simultaneously meet the requirements of low on-resistance under high-frequency switching and fast recovery characteristics, forming dual technical requirements of "low loss + high robustness".

2. Advantages of 48V Secondary-Side Full-Bridge Rectifier Topology

The 48V system adopts a full-bridge synchronous rectifier topology, which uses four MOSFETs to form a bridge structure for bidirectional current rectification. Compared with the 12V center-tapped solution, it has significant advantages: the current stress of a single tube is reduced by 50%, no symmetric secondary windings are required, and the power density is increased by more than 30%. The synchronous rectifier MOSFETs marked in the red box operate in a high-frequency switching state, and their performance directly determines the system's energy efficiency.

Selection Guide and Advantages of SGT Technology

1. Selection Parameters for 150V Series Products

Based on the 48V output requirement, secondary-side synchronous rectifier MOSFETs should be selected with a voltage rating of 150V (reserving a safety margin of more than 3 times). In the selection table, the TO-263 package is adopted, providing multiple levels of on-resistance options:

2. Energy Efficiency Breakthrough of SGT Technology

SGT (Trench Gate) MOSFETs improve channel density through a three-dimensional gate structure, reducing on-resistance by more than 30%. Taking the 150V 3.8mΩ model as an example, compared with traditional planar gate MOSFETs, it reduces conduction losses by 24%, and can save up to 16.8 kWh of electricity per year under the working condition of 48V/40A. Its low gate charge characteristic supports a switching frequency of more than 2MHz, helping the power module's power density exceed 100W/cm³.

Core Advantages of SGT MOSFETs

• On-resistance as low as 3.8mΩ
• Reduced gate charge, adapting to the trend of high-frequency design
• Optimized heat dissipation paths with TO220/TO263 packages, improving reliability

Application Value and Technical Trends

Medium-to-low voltage MOSFETs support the upgrading of data center power supplies in three dimensions: improving DC-DC conversion efficiency, reducing the cost of heat dissipation systems, and increasing power density.

Conclusion

As the core component of the 48V isolated DC-DC secondary side, medium-to-low voltage MOSFETs provide the optimal solution for "energy efficiency - density - cost" in data center power supply systems through three major advantages: low on-resistance, fast switching characteristics, and high reliability. Scientific selection based on the selection table combined with the full-bridge synchronous rectifier topology can increase the power module efficiency by 2-3% and reduce its volume by 40%, making it a key technical cornerstone for supporting high-density computing scenarios.

Company Introduction

Founded in 1992, Heketech is a high-tech enterprise specializing in electronic components, integrating R&D, design, production, and sales. It focuses on providing cost-effective component supply and customization services to meet the R&D needs of enterprises.

Product Supply Categories

Covers semiconductor packaging materials, passive components such as resistors/capacitors/inductors; as well as MOSFETs, TVS diodes, Schottky diodes, Zener diodes, fast recovery diodes, bridge rectifiers, diodes, transistors, power devices, power management ICs, and others — offering one-stop procurement for all R&D and production needs.

Two Smart Manufacturing Centers

The South China and Southwest manufacturing centers (Huizhou: 75,000 m²; Nanchong: 35,000 m²) are equipped with more than 3,000 sets of advanced equipment and testing instruments. In 2024, 3 new semiconductor material subsidiaries were added to control production capacity and delivery efficiency from the source.

OEM Services for Packaging and Testing

Supports sample customization and small-batch trial production. With more than 100 patented technologies and certification systems including ISO9001 and IATF16949, the principle of "quality first" is implemented in every link from R&D to delivery.

Adhering to the core values of "customer-oriented and innovation-driven", Heketech provides stable and reliable components for enterprises.

(Note: Sample Application / Solution Consultation / Small-Batch Procurement ↓)

Scan to Contact Heketech

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