Introduction

In wideband electronic systems such as audio power amplification, industrial control, and power management, the design of power amplifiers requires a balance of multiple aspects: it must not only cover a sufficient bandwidth range but also ensure gain stability within the operating frequency band. As a result, strict requirements are imposed on the on-resistance, parasitic parameters, and thermal stability of MOSFETs. To resolve this dilemma of extreme balance requirements, engineers at Heketai have optimized and designed high-performance power MOSFETs.

I. Wideband Pain Points of Traditional Amplifiers

According to amplifier theory, the gain-bandwidth product (GBW) of any amplifier is an approximate constant. This means that when high gain is required, the available bandwidth will inevitably decrease; conversely, if a wide bandwidth is needed, part of the gain must be sacrificed. This relationship imposes significant constraints on achieving both high gain and wide bandwidth simultaneously.

In practical applications, multi-stage amplification circuits are often used to obtain sufficient gain. However, more stages lead to greater accumulation of parasitic parameters, which degrades the high-frequency response performance. Therefore, to meet wideband requirements, it is essential to address the issues of excessive parasitic parameters and conduction losses.

II. High-Efficiency Power MOSFET HKTD15N10

A key technology in amplifier design is negative feedback technology. Its basic principle involves feeding a portion of the amplifier’s output signal back to the input terminal, where it is subtracted from the input signal. This technology can optimize amplifier performance and enable precise control of its characteristics. However, this approach also reduces the total gain and may introduce phase distortion.

To tackle the wideband pain points of amplifiers, Heketai has developed the power MOSFET HKTD15N10, which features low on-resistance and low parasitic capacitance. Its specific parameters are as follows: input capacitance (Ciss) of 800pF, output capacitance (Coss) of 40pF, and reverse transfer capacitance (Crss) of 35pF. Practical tests show that under these parameters, the amplifier’s power efficiency is significantly improved, delivering excellent performance in audio and intermediate-frequency applications.

Parameter Notes (VGS=0V, f=1MHz)

• Ciss = Cgs + Cgd (with ds SHORTED)
• Crss = Cgd
• Coss = Cds + Cgd

III. Application Scenarios and Practical Tips

This MOSFET is suitable for power amplification applications requiring high efficiency and stability, such as audio power amplifiers, power stages of DC-DC converters, motor drive power amplifiers, power modules for industrial control equipment, and power management systems. When using the HKTD15N10 for power amplifier design, attention should be paid to the following application details:

• The gate drive voltage is recommended to be 10-15V to ensure full conduction and reduce on-resistance.
• The drive resistor is recommended to be in the range of 100Ω to 1000Ω. An excessively small resistor will cause excessive drive current, while an excessively large resistor will affect switching speed.
• For inductive components, it is advisable to prioritize wirewound inductors with high Q values, which can improve efficiency and reduce losses.
• In circuit layout, the path of the power loop should be as short and wide as possible, and the copper area should be sufficiently large to reduce parasitic inductance and resistance.
• It is recommended to add a 10-100nF acceleration capacitor between the gate and source to improve switching characteristics.

Conclusion

As a national-level high-tech enterprise, Heketai focuses on addressing engineers’ "practical pain points" at every step, from chip design to packaging optimization. The HKTD15N10 is not a product "developed merely for parameter performance"; instead, it is a "practical" power MOSFET that truly solves the problem of "low power efficiency". We not only provide products but also offer free design support—Heketai’s FAEs (Field Application Engineers) and engineers are on standby at all times. If you are interested, please scan the QR code below to contact us!

Company Introduction

Founded in 1992, Heketai is a professional high-tech and "Specialized, Refined, Characteristic, and Innovative" enterprise integrating R&D, design, production, and sales of electronic components. We focus on providing cost-effective component supply and customization services to meet the R&D needs of enterprises.

Product Supply Range

We cover semiconductor packaging materials, passive components such as resistors/capacitors/inductors, as well as active and power devices including MOSFETs, TVS diodes, Schottky diodes, voltage regulators, fast recovery diodes, bridge rectifiers, diodes, triodes, and power management ICs. We offer a one-stop solution for all components required in R&D and production.

Two Intelligent Manufacturing Centers

Our manufacturing centers in South China (Huizhou, 75,000 m²) and Southwest China (Nanchong, 35,000 m²) are equipped with over 3,000 sets of advanced equipment and testing instruments. In 2024, we added 3 new semiconductor material subsidiaries to control production capacity and delivery efficiency from the source.

Packaging and Testing OEM Services

We support sample customization and small-batch trial production. Combined with more than 100 patented technologies and certification systems including ISO9001 and IATF16949, we ensure that "quality first" runs through every link from R&D to delivery.

Heketai always adheres to the core values of "customer-oriented and innovation-driven", providing stable and reliable components for enterprises.

(Note: Sample Application / Solution Consultation / Small-Batch Procurement ↓)

Scan to Contact Heketai

• Sales Hotline: 18823438533 (WeChat ID: same as the phone number)
• Company Tel: 0755-82565333
• Email: hkt@heketai.com
• Marketing Center: 8th Floor, Building 7, Kangli City, Longgang District, Shenzhen City, Guangdong Province
• Manufacturing Centers:
• 183B, Puxinhu Commercial Street, Tangxia Town, Dongguan City
• Buildings 17 & 18, Kechuang Center, High-Tech Zone, Nanchong City, Sichuan Province