The threshold voltage of a MOSFET is a critical parameter that determines whether the device turns on or off, and its variation characteristics directly affect the reliability and energy efficiency of circuit designs. The threshold voltage is defined as the minimum gate voltage required to form a strong inversion layer on the semiconductor surface. For an N-channel MOSFET, the inversion condition is achieved when the surface potential reaches twice the Fermi potential.

The threshold voltage increases with the rise in substrate doping concentration. When the doping concentration (Nₐ) of a P-type silicon substrate increases, the Fermi level shifts toward the top of the valence band, leading to an increase in the Fermi potential (ψ₈). This means a higher gate voltage is required to achieve the strong surface inversion condition, thus the threshold voltage rises accordingly. This characteristic necessitates adjustments to device design in high-doping processes to ensure an appropriate turn-on voltage.

The effect of temperature on the threshold voltage exhibits a negative temperature coefficient behavior. As temperature increases, the intrinsic carrier concentration rises, and the Fermi level shifts toward the center of the bandgap, reducing the Fermi potential (ψ₈). This allows surface inversion to occur at a lower gate voltage, resulting in a decrease in the threshold voltage. Typically, the threshold voltage drops by approximately 2 mV for every 1 degree Celsius increase in temperature—a variation that must be considered in applications involving a wide temperature range.

In practical circuit design, the stability of the threshold voltage is crucial. For industrial-grade applications, devices with a smaller threshold voltage temperature coefficient should be selected to maintain stable switching characteristics when the ambient temperature changes. Heketai’s MOSFET products, through optimized doping processes and structural design, ensure excellent consistency of the threshold voltage under different temperature conditions, making them particularly suitable for industrial control and automotive electronics systems that demand high reliability.

During the component selection process, engineers must evaluate the threshold voltage parameter based on the application scenario. For battery-powered portable devices, devices with a lower threshold voltage are usually chosen to reduce the required drive voltage and improve energy efficiency. In contrast, for industrial systems in high-noise environments, devices with a higher threshold voltage are preferred to enhance anti-interference capability. Heketai offers a full range of MOSFET products, from standard-grade to enhanced-grade, with a wide coverage of threshold voltage ranges to meet the specific needs of different applications.

Heketai’s devices adopt advanced ion implantation processes and gate oxide control technologies during manufacturing, ensuring batch-to-batch consistency and long-term stability of the threshold voltage. Our product data sheets provide detailed threshold voltage temperature characteristic curves and parameter distribution ranges, offering engineers accurate bases for component selection. Through Heketai’s technical support services, customers can obtain threshold voltage optimization recommendations tailored to specific applications, ensuring the reliability and performance optimization of system designs.

Company Introduction

Founded in 1992, Heketai is a high-tech enterprise specializing in electronic components, integrating R&D, design, production, and sales. It is also recognized as a "Zhuan Jing Te Xin" enterprise (a Chinese government designation for enterprises focusing on specialized, refined, characteristic, and innovative development). The company focuses on providing cost-effective component supply and customized services to meet the R&D needs of enterprises.

Product Portfolio

• Covers semiconductor packaging materials, passive components (such as resistors, capacitors, and inductors);
• Includes active and power devices: MOSFETs, TVS diodes, Schottky diodes, Zener diodes, fast recovery diodes, bridge rectifiers, diodes, transistors, and power devices;
• Also offers power management ICs and other products, enabling one-stop procurement for R&D and production needs.

Two Intelligent Manufacturing Centers

• South China Manufacturing Center (Huizhou) : Covers 75,000 m²;
• Southwest Manufacturing Center (Nanchong) : Covers 35,000 m²;
• Equipped with over 3,000 sets of advanced equipment and testing instruments in total.
• In 2024, 3 new semiconductor material subsidiaries were established to control production capacity and delivery efficiency from the source.

Packaging and Testing OEM Services

• Supports custom sample production and small-batch trial production;
• Backed by more than 100 patented technologies and certified management systems (ISO9001, IATF16949), ensuring the "quality first" principle is implemented in every link from R&D to delivery.

Adhering to the core values of "Customer-Centric, Innovation-Driven", Heketai is committed to providing stable and reliable components for enterprises.

(Note: For sample application, solution consultation, or small-batch procurement ↓)

Contact Heketai via QR Code Scan

Sales Hotline: 18823438533 (WeChat ID: same as the phone number)

Company Tel: 0755-82565333

Email Address: hkt@heketai.com

Marketing Center: 8th Floor, Building 7, Kangli City, Longgang District, Shenzhen City, Guangdong Province

Manufacturing Centers:

• 183B, Puxinhu Commercial Street, Tangxia Town, Dongguan City
• Buildings 17 & 18, Kechuang Center, High-Tech Zone, Nanchong City, Sichuan Province