Against the backdrop of power electronic devices evolving toward miniaturization and higher efficiency, Heketai’s TOLL4-packaged super-junction MOSFET (Model: HKTS13N65) has emerged as a core choice for enhancing power density in fields such as industrial power supplies and new energy systems, thanks to the synergistic optimization of super-junction technology and TOLL4 packaging. This N-channel power device strikes a balance between a 650V voltage withstand capability and a 13A continuous current. Leveraging super-junction technology, its on-resistance is as low as 300mΩ when VGS is 10V, significantly reducing conduction losses compared to traditional planar MOSFETs.

Synergistic Advantages of Super-Junction Technology and TOLL4 Packaging

The core value of the HKTS13N65 stems from technology integration. The super-junction structure, featuring alternating P-type pillars and N-type drift regions, effectively reduces conduction losses in high-voltage environments. It maintains a continuous current output of 8A even at a junction temperature of 100°C, while its 120mJ avalanche energy provides safety guarantees for high-voltage scenarios such as photovoltaic inverters.

The TOLL4 package redefines the physical form: leadless surface-mount design supports automated production, and its top-side heat dissipation structure combined with Kelvin source design delivers differentiated advantages. Test results show that this package has a parasitic inductance of only 5nH, which effectively suppresses switching noise and supports a switching frequency of 600kHz—marking a significant improvement over traditional packages. Additionally, the Kelvin source separates the gate drive from the main power loop, drastically reducing switching losses and noticeably enhancing system efficiency in LLC resonant circuits.

Application Adaptation for High-Power-Density Scenarios

Fast-Charging Power Supplies

In 20W PD fast-charging solutions, the HKTS13N65’s 2.0mm thickness, combined with a 600kHz switching frequency, enables the product thickness to be controlled within 18mm while maintaining high efficiency. During a 30-minute full-load cycle, the case temperature stabilizes at 58°C—significantly lower than that of traditional solutions—aligning with the trend of balancing power and user experience in the fast-charging field.

Photovoltaic Inverters

In the Boost circuit of string inverters, the HKTS13N65’s wide junction temperature range (-55°C to 150°C) ensures no performance degradation during low-temperature startup at -30°C. Its 120mJ avalanche energy can withstand voltage spikes caused by grid faults, providing reliable protection for the system.

UPS Systems

In the bidirectional DC-DC converter of 10kVA UPS systems, the HKTS13N65’s 100ns switching speed maintains high conversion efficiency—markedly higher than that of IGBT-based solutions. Its low-inductance 特性 significantly reduces EMI emissions, easily meeting the EN55022 Class B standard and satisfying strict electromagnetic compatibility requirements.

Industrial Switching Power Supplies

The TOLL4 package supports double-sided PCB layouts, which significantly reduces the area of the power loop. This makes it particularly suitable for high-density designs of multiphase power supplies, helping engineers achieve more compact product forms.

Key Guidelines for Engineering Practice

Heat Sink Pad Design

Adhere to the principle of maximizing copper foil area: the heat sink pad area should be no less than 1.5 times the package size. A 2oz copper thickness is recommended, with an array of 0.3mm vias spaced 1mm apart. Vias must be metallized, with a hole wall copper thickness of no less than 25μm. This design effectively reduces thermal resistance, leading to a significant drop in junction temperature under 10W power dissipation.

Power Loop Layout

The core principle is to minimize the area of the high-frequency loop: the loop formed by the input capacitor, MOSFET, and transformer primary should be controlled within 2cm². Adopt a "field-shaped" symmetric routing to ensure uniform current distribution, which effectively reduces switching losses and EMI peaks. Additionally, gate drive traces must be kept away from power paths, with a length not exceeding 5mm.

Gate Drive Optimization

Implement Kelvin connections correctly: drive signals should be directly connected to the source sense pin, avoiding shared paths with the main power loop. A 2.2Ω gate resistor is recommended to suppress oscillations; for high-frequency applications, a 100pF capacitor can be connected in parallel to optimize switching speed. This configuration significantly reduces voltage overshoot under hard-switching conditions, greatly improving reliability.

Safety Compliance Design

Meet the creepage distance requirements for the 650V voltage class: the distance between the primary and secondary sides should be no less than 2.5mm, and slot isolation is recommended to enhance safety. PCBs should preferably use FR-4 substrates with a glass transition temperature (Tg) of no less than 170°C; in humid and hot environments, aluminum substrates can be used to further reduce thermal resistance.

Conclusion

The development of the TOLL4 package is highly aligned with trends in new energy and Industry 4.0, and its applications in fast charging, photovoltaics, and energy storage will become more widespread in the future. The HKTS13N65 is not merely a single MOSFET but a comprehensive power density solution. It helps engineers break through design limitations amid the trend of miniaturization and higher efficiency in power electronics, enabling more reliable and compact product designs. Heketai remains committed to technological innovation as its core, providing customers with power devices that adapt to industrial trends and contributing to industry upgrading.

Company Introduction

Founded in 1992, Heketai is a high-tech and "Specialized, Refined, Characteristic, and Innovative" enterprise integrating R&D, design, production, and sales of professional electronic components. We focus on providing cost-effective component supply and customization services to meet the R&D needs of enterprises.

Product Categories

We offer a comprehensive range of discrete devices and passive components such as chip resistors, including MOSFETs, TVS diodes, Schottky diodes, Zener diodes, fast recovery diodes, bridge rectifiers, diodes, transistors, resistors, and capacitors.

Two Intelligent Manufacturing Centers

Our manufacturing centers in South China (Huizhou, covering 75,000 m²) and Southwest China (Nanchong, covering 35,000 m²) are equipped with over 3,000 sets of advanced equipment and testing instruments. In 2024, we added 3 new semiconductor material subsidiaries to control production capacity and delivery efficiency from the source.

OEM Packaging and Testing Services

We support custom sample production and small-batch trial runs. Combined with over 100 patented technologies and certification systems (including ISO9001 and IATF16949), we ensure that "quality first" is implemented in every link from R&D to delivery.

Heketai has always prioritized "customer-centricity and innovation-driven development" as its core values, providing enterprises with stable and reliable components.

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Contact Heketai via QR Code Scan

Sales Hotline: 18823438533 (WeChat ID: same as the phone number)Company Tel: 0755-82565333Email Address: hkt@heketai.comMarketing Center: 8th Floor, Building 7, Kangli City, Longgang District, Shenzhen City, Guangdong ProvinceManufacturing Centers:

• 183B, Puxinhu Commercial Street, Tangxia Town, Dongguan City
• Buildings 17 & 18, Kechuang Center, High-Tech Zone, Nanchong City, Sichuan Province