Preface

In modern power control systems, MOSFETs have become indispensable core components. Their most fundamental and core role is to act as high-speed switching elements. For instance, through the variation of gate voltage (high or low), they can rapidly switch the on and off states between the source and drain, thereby achieving precise management of power circuits. This switching function is not merely a simple on-off operation; instead, it is deeply involved in the key links of power conversion and energy distribution, serving as the foundation for power systems to operate efficiently and stably.

Core Functions of MOSFETs: Power Conversion and Energy Control

The value of MOSFETs in power control stems from their ability to achieve efficient energy conversion with extremely low losses, which is specifically realized through three major mechanisms:

• Precise Voltage Regulation: In DC-DC converters, MOSFETs convert unstable input voltages into stable outputs required by loads through high-frequency switching actions. For example, in the step-down circuit of mobile phone fast charging, the switching frequency of MOSFETs can reach over 600 kHz, and the regulation accuracy can be controlled within ±1%, ensuring that the battery receives a stable charging voltage.
• Linear Current Control: By adjusting the amplitude of the gate voltage, MOSFETs can linearly control the conduction degree of the channel, thereby accurately regulating the load current. This characteristic enables them to meet requirements ranging from microampere-level (such as in sensor power supplies) to ampere-level (such as in electric vehicle motor drives). In LED driver circuits, MOSFETs can control the current accuracy within ±5%, ensuring the consistency of LED brightness.
• Flexible Topology Adaptation: MOSFETs can form various topological structures such as boost, buck, and flyback, adapting to different input-output voltage relationships. For example, in the boost circuit of a solar photovoltaic system, the Boost topology composed of MOSFETs can increase the low voltage (24V) of the photovoltaic panel to the high voltage (400V) required by the bus.

Advantages of MOSFETs: High Efficiency, Energy Saving, and System Protection

The widespread application of modern MOSFETs is essentially driven by both efficiency and reliability:

• Extremely Low Conduction Loss: Advanced processes such as trench and super-junction technologies reduce the on-resistance of MOSFETs to just a few milliohms. Low on-resistance means significantly reduced losses, which can improve system efficiency under high currents. This high efficiency enables the conversion efficiency of MOSFET power supply systems to generally reach over 90%, and some high-frequency switching power supplies even exceed 95%.
• Comprehensive Built-in Protection: Modern MOSFETs generally integrate protection functions such as overvoltage, overcurrent, short-circuit, and overheating protection. When the system encounters issues such as excessively high input voltage, load short-circuit, or device overheating, the MOSFET will quickly turn off the channel. For example, the overheating protection threshold of a certain MOSFET model from Heketa is 150°C; when the junction temperature reaches this value, the drive is automatically cut off to prevent the device from being burned.

Application Scenarios and Design Considerations

MOSFETs are applied in scenarios covering consumer electronics, industrial fields, automotive electronics, and all other fields that require power control. During the design process, engineers need to focus on drive circuit matching and parasitic parameter control. For the former, the drive current and rise/fall rate directly affect the switching performance; for the latter, parameters such as inter-electrode capacitance can affect EMI (Electromagnetic Interference) and switching losses.

With the advancement of technology, MOSFETs are evolving towards the trends of high frequency, low resistance, and integration. The switching frequency has increased from several tens of kHz to several MHz, promoting the miniaturization of power supply systems; 8-inch wafers and thinner oxide layer processes further reduce the on-resistance; the temperature resistance and voltage resistance characteristics of silicon carbide (SiC) and gallium nitride (GaN) MOSFETs provide better solutions for high-voltage scenarios such as new energy and photovoltaics.

Recommendation of High-Reliability MOSFETs

As a national high-tech enterprise focusing on semiconductor discrete devices, Heketa holds ISO9001 and IATF16949 certifications. Its MOSFETs cover packages such as SOT23, TO-252, TOLL4, and TO-247, meeting the needs of different scenarios:

• High-Current Load Switch: HKTD100N03 (TO-252 package), 30V/100A, RDS(on)=3.5mΩ, suitable for electric vehicle BMS (Battery Management System);
• High-Voltage Power Conversion: HKTS13N65 (TOLL4 package), 650V/13A, super-junction process, suitable for photovoltaic inverters;
• High-Frequency DC-DC Conversion: HKTD80N03 (TO-252 package), 30V/80A, gate charge 80nC, suitable for mobile phone fast charging.

MOSFETs are the cornerstone of modern power control. A deep understanding of their functions and application characteristics is crucial for designing high-performance power supply systems. With full-process quality control and technical support, Heketa provides engineers with reliable MOSFET solutions, helping to achieve efficient and stable power supply design.

If you need to learn more about the parameters or application solutions of Heketa MOSFETs, please feel free to leave a message for consultation!

Company Introduction

Founded in 1992, Heketa is a professional high-tech enterprise specializing in components, integrating R&D, design, production, and sales. It focuses on providing cost-effective component supply and customization services to meet the R&D needs of enterprises.

• Product Supply Categories: It fully covers discrete devices and passive components such as chip resistors, mainly including MOSFETs, TVS (Transient Voltage Suppressors), Schottky diodes, Zener diodes, fast recovery diodes, bridge rectifiers, diodes, transistors, resistors, and capacitors.
• Two Intelligent Manufacturing Centers: The manufacturing centers in South China and Southwest China (Huizhou: 75,000 m² + Nanchong: 35,000 m²) are equipped with more than 3,000 sets of advanced equipment and testing instruments; in 2024, 3 new semiconductor material subsidiaries were added to control production capacity and delivery efficiency from the source.
• Packaging and Testing OEM Services: It supports sample customization and small-batch trial production. With over 100 patented technologies and ISO9001, IATF16949 certification systems, it ensures that "quality first" runs through every link from R&D to delivery.

Adhering to the core values of "customer-oriented and innovation-driven", Heketa has always been committed to providing enterprises with stable and reliable components.

(Attachment: Sample Application / Solution Consultation / Small-Batch Procurement ↓)

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