Reverse Recovery Time of Diodes: Principles, Impacts, and HeKangTai's Solutions

time:2025-09-22 11:21:16  source:this site

Introduction

In circuits such as switching power supplies, high-frequency rectifiers, and inverters, the reverse recovery time of diodes is directly related to system efficiency, EMI performance, and even reliability. Through chip design and process innovation, HeKangTai provides the market with diode products featuring excellent reverse recovery time performance. Then, what is the reverse recovery time of a diode? What impacts can it have? And how does HeKangTai address this issue?

The Principle of Reverse Recovery Time

When a diode abruptly transitions from forward conduction to reverse bias, the minority carriers stored in the PN junction require a certain amount of time to be depleted or recombined. During this process, a relatively large reverse current is generated, and this time period is known as the reverse recovery time. The longer this time, the longer the reverse current persists, resulting in greater switching losses and noise.

When a diode suddenly shifts from the forward conduction state to the reverse bias state, it does not cut off immediately. Instead, it continues to conduct reverse current for a period until the charge stored in the PN junction is completely released. The time required for this process is the reverse recovery time. In simple terms, reverse recovery time refers to the transition period a diode undergoes from conduction to complete cut-off. This phenomenon occurs because a certain number of minority carriers are stored in the PN junction during forward conduction; when a reverse voltage is applied, these minority carriers need time to be neutralized or extracted, leading to the existence of reverse current.

HeKangTai adopts an advanced PIN structure design. Compared with traditional PN junctions, its depletion region is wider, and the charge recombination efficiency during the reverse recovery process is higher, which can significantly reduce reverse recovery current and switching losses.

The Impacts of Reverse Recovery Time

Reverse recovery time exerts multifaceted impacts on circuit performance. In high-frequency circuits, a short reverse recovery time is particularly crucial. If the reverse recovery time is excessively long, the diode will generate a large reverse current when in reverse bias. This not only increases circuit power consumption but may also cause electromagnetic interference (EMI), affecting the normal operation of other electronic devices.

In addition, reverse recovery time also influences the switching speed and efficiency of the circuit. In applications such as switching power supplies, an overly long reverse recovery time leads to significant losses in diodes during the switching process, reducing the power conversion efficiency and even potentially damaging the diodes and other components. HeKangTai's ultra-fast recovery diode series (e.g., the ES1JL series) adopts a glass passivation process, achieving a reverse recovery time as low as 35ns, which is far superior to industry standards and particularly suitable for high-frequency switching power supply applications.

HeKangTai's Solutions

As a professional electronic component manufacturer, HeKangTai recognizes the importance of reverse recovery time to diode performance and has implemented a series of effective solutions.


Optimized Chip Structure

HeKangTai has reduced the number of minority carriers stored in the PN junction by improving the diode's chip structure. Through the adoption of special doping processes and structural designs, minority carriers can be neutralized or extracted more quickly under reverse bias, thereby effectively shortening the reverse recovery time.


Advanced Packaging and Consistency

HeKangTai employs advanced semiconductor manufacturing processes to enhance the material quality and performance consistency of diodes. It adopts packages such as SOD-123 and SMA to optimize heat dissipation and parasitic parameters. Fully automated testing and sorting ensure the consistency of parasitic parameters and other characteristics, meeting the stringent performance requirements of different customers.


Rigorous Testing and Screening

During the production process, HeKangTai conducts rigorous testing and screening on each diode. Using high-precision testing equipment, it accurately measures key parameters such as reverse recovery time and eliminates products that do not meet requirements, ensuring that the diodes delivered to customers possess excellent performance and reliability.

These solutions enable HeKangTai's diodes to exhibit outstanding performance in terms of reverse recovery time, capable of meeting the demands of complex circuits such as high-frequency and high-speed applications. Whether in the fields of communication equipment, industrial control, or consumer electronics, HeKangTai's diodes provide customers with stable and efficient solutions, helping electronic devices achieve superior performance.

Company Introduction

Founded in 1992, HeKangTai is a high-tech and "Zhuan Jing Te Xin" (Specialized, Refined, Characteristic, Innovative) enterprise integrating R&D, design, production, and sales of professional components. It focuses on providing cost-effective component supply and customized services to meet the R&D needs of enterprises.


Product Supply Categories

Covering semiconductor packaging materials, passive components such as resistors/capacitors/inductors; as well as MOSFETs, TVS, Schottky diodes, Zener diodes, fast recovery diodes, bridge rectifiers, diodes, triodes, power devices, power management ICs, and others, providing one-stop procurement for R&D and production needs.


Two Intelligent Manufacturing Centers

The South China and Southwest Manufacturing Centers (Huizhou: 75,000 ㎡ + Nanchong: 35,000 ㎡) are equipped with more than 3,000 advanced equipment and testing instruments. In 2024, 3 new semiconductor material subsidiaries were added to control production capacity and delivery efficiency from the source.


Packaging and Testing OEM Services

Supporting sample customization and small-batch trial production, combined with over 100 patented technologies and ISO9001, IATF16949 certification systems, ensuring that "quality first" runs through every link from R&D to delivery.

Adhering to the core values of "customer-centric, innovation-driven", HeKangTai provides stable and reliable components for enterprises.

(Note: Sample Application / Solution Consultation / Small-Batch Procurement ↓)

Scan to Contact HeKangTai

  • Sales Hotline: 18823438533 (WeChat ID same as phone number)
  • Company Tel: 0755-82565333
  • Email: hkt@heketai.com
  • Marketing Center: 8th Floor, Building 7, Kangli City, Longgang District, Shenzhen, Guangdong
  • Manufacturing Centers:
  • 183B Puxinhu Commercial Street, Tangxia Town, Dongguan City
  • Buildings 17 & 18, Hi-Tech Innovation Center, Gaoxin District, Nanchong City, Sichuan Province