Introduction

In wideband electronic systems such as audio power amplification, industrial control, and power management, the design of power amplifiers requires a balance of multiple factors: it must not only cover a sufficient bandwidth range but also ensure gain stability within the operating frequency band. Therefore, strict requirements are imposed on the on-resistance, parasitic parameters, and thermal stability of MOSFETs. To address this dilemma of extreme balance requirements, engineers at Heketai have optimized and developed power MOSFETs with excellent performance.

I. Wideband Pain Points of Traditional Amplifiers

According to amplifier theory, the gain-bandwidth product (GBW) of any amplifier is an approximate constant. This means that when the gain is high, the available bandwidth will inevitably decrease; conversely, if a wide bandwidth is required, part of the gain must be sacrificed. This relationship imposes significant limitations on achieving both high gain and wide bandwidth simultaneously.

In practical applications, multi-stage amplification circuits are often used to obtain sufficient gain. However, more stages lead to the accumulation of more parasitic parameters, which deteriorates the high-frequency response performance. Therefore, to meet wideband requirements, it is necessary to address the issues of excessive parasitic parameters and conduction loss.

II. High-Efficiency Power MOSFET HKTD15N10

A key technology in amplifier design is negative feedback technology. Its basic principle involves feeding back a portion of the amplifier’s output signal to the input terminal, where it is subtracted from the input signal. This technology can optimize amplifier performance and enable precise control of its characteristics. However, this approach also reduces the total gain and introduces phase distortion.

To address the wideband pain points of amplifiers, Heketai has developed the power MOSFET HKTD15N10, which features low on-resistance and low parasitic capacitance. Its specific parameters are as follows: input capacitance (Ciss) of 800pF, output capacitance (Coss) of 40pF, and reverse transfer capacitance (Crss) of 35pF. Practical tests show that under these parameters, the power efficiency of the amplifier is significantly improved, and it performs excellently in audio and intermediate-frequency applications.

Parameter Notes

• Test Conditions: VGS = 0V, f = 1MHz
• Capacitance Definitions:
• Ciss = Cgs + Cgd (with ds SHORTED)
• Crss = Cgd
• Coss = Cds + Cgd

III. Application Scenarios and Practical Tips

This MOSFET is suitable for power amplification applications requiring high efficiency and stability, such as audio power amplifiers, power stages of DC-DC converters, motor drive power amplifiers, power modules of industrial control equipment, and power management systems. When using the HKTD15N10 for power amplifier design, attention should be paid to the following application details:

• The gate drive voltage is recommended to be 10-15V to ensure full conduction and reduce on-resistance.
• The drive resistor is recommended to be 100Ω to 1000Ω: too small a resistance will cause excessive drive current, while too large a resistance will affect switching speed.
• For inductive components, it is recommended to prioritize wirewound inductors with high Q values, which can improve efficiency and reduce losses.
• In circuit layout, the path of the power loop should be as short and wide as possible, and the copper area should be sufficiently large to reduce parasitic inductance and resistance.
• It is recommended to add a 10-100nF speed-up capacitor between the gate and source to improve switching characteristics.

Conclusion

As a national-level high-tech enterprise, Heketai focuses on addressing engineers’ "practical pain points" at every step, from chip design to packaging optimization. The HKTD15N10 is not a product "built merely for parameters"; instead, it is a "practical" power MOSFET that truly solves the problem of "low power efficiency". We not only provide products but also offer free design support—Heketai’s Field Application Engineers (FAEs) and R&D engineers are on standby at all times. For further interest, please scan the QR code below to contact us!

Company Introduction

Founded in 1992, Heketai is a professional high-tech enterprise specializing in electronic components, integrating R&D, design, production, and sales. It is also recognized as a "Specialized, Refined, Differential, and Innovative" enterprise. The company focuses on providing cost-effective component supply and customization services to meet the R&D needs of enterprises.

Product Supply Range

It covers semiconductor packaging materials, passive components such as resistors/capacitors/inductors, as well as active and power devices including MOSFETs, TVS diodes, Schottky diodes, voltage regulators, fast recovery diodes, bridge rectifiers, diodes, transistors, and power management ICs. It offers a one-stop solution for all components required in R&D and production.

Two Intelligent Manufacturing Centers

The manufacturing centers in South China (Huizhou, covering 75,000 m²) and Southwest China (Nanchong, covering 35,000 m²) are equipped with over 3,000 sets of advanced equipment and testing instruments. In 2024, Heketai added 3 new semiconductor material subsidiaries to control production capacity and delivery efficiency from the source.

Packaging and Testing OEM Services

It supports sample customization and small-batch trial production. With over 100 patented technologies and certification systems including ISO9001 and IATF16949, the company ensures that "quality first" runs through every link from R&D to delivery.

Adhering to the core values of "Customer-Centric, Innovation-Driven", Heketai is committed to providing stable and reliable components for enterprises.

(Note: Sample Application / Solution Consultation / Small-Batch Procurement ↓)

_{Contact Heketai via QR Code Scan}

• Sales Hotline: 18823438533 (WeChat ID: same as the phone number)
• Company Tel: 0755-82565333
• Email: hkt@heketai.com
• Marketing Center: 8th Floor, Building 7, Kangli City, Longgang District, Shenzhen City, Guangdong Province
• Manufacturing Centers:

1. 183B, Puxinhu Commercial Street, Tangxia Town, Dongguan City
2. Buildings 17 & 18, Kechuang Center, High-Tech Zone, Nanchong City, Sichuan Province