Preface

In the design of battery-powered products, achieving high-efficiency power control within limited space has long been a key challenge for engineers.Heketai AO4616A adopts an SOP-8 package, integrating one N-channel MOSFET and one P-channel MOSFET into a single package.This complementary topology has been widely used in various battery management solutions, with well-proven reliability and practical performance.Compared with discrete dual-device designs, the integrated package effectively saves PCB footprint and simplifies circuit routing.In addition, single-package components facilitate easier material management and reduce supply chain complexity.

Electrical Parameters

In terms of electrical specifications, the N-channel MOSFET of AO4616A features a 30V drain-source voltage rating, fully meeting the requirements of single-cell lithium battery power supply systems.Its continuous drain current is 12A at 25℃, and drops to 8A at an ambient temperature of 100℃.Regarding on-resistance: typical RDS(on) is below 14mΩ at VGS=10V, and below 21mΩ at VGS=4.5V.

The P-channel MOSFET also supports 30V withstand voltage. It delivers a continuous current of 10A at 25℃ and 4.6A at 100℃.Its on-resistance is lower than 23mΩ at VGS=-10V, and lower than 28mΩ at VGS=-4.5V.

Preface

In the design of battery-powered products, achieving high-efficiency power control within limited space has long been a key challenge for engineers.Heketai AO4616A adopts an SOP-8 package, integrating one N-channel MOSFET and one P-channel MOSFET into a single package.This complementary topology has been widely used in various battery management solutions, with well-proven reliability and practical performance.Compared with discrete dual-device designs, the integrated package effectively saves PCB footprint and simplifies circuit routing.In addition, single-package components facilitate easier material management and reduce supply chain complexity.

Electrical Parameters

In terms of electrical specifications, the N-channel MOSFET of AO4616A features a 30V drain-source voltage rating, fully meeting the requirements of single-cell lithium battery power supply systems.Its continuous drain current is 12A at 25℃, and drops to 8A at an ambient temperature of 100℃.Regarding on-resistance: typical RDS(on) is below 14mΩ at VGS=10V, and below 21mΩ at VGS=4.5V.

The P-channel MOSFET also supports 30V withstand voltage. It delivers a continuous current of 10A at 25℃ and 4.6A at 100℃.Its on-resistance is lower than 23mΩ at VGS=-10V, and lower than 28mΩ at VGS=-4.5V.

Compared with similar P-channel devices, such low on-resistance helps reduce static power loss.In terms of switching characteristics, the N-channel gate charge is 5.2nC and the P-channel is 10nC, both delivering excellent switching response speed.The thermal resistance values are 46.3℃/W for the N-channel and 50℃/W for the P-channel, matching the standard thermal performance of SOP-8 packages and facilitating thermal management design.

Application Scenarios

The package and parameter specifications of AO4616A suit multiple typical applications.In battery protection circuits, the N-channel MOSFET acts as the discharge path switch, while the P-channel controls the charging path, a widely adopted configuration in mainstream lithium battery protection board designs.For load switching applications, the complementary MOSFET features simple gate control logic, easily cooperating with main control ICs to manage power-on sequences.In power management, it can be used as both low-side and high-side switches, meeting on-off control requirements for low-power loads.Its 30V voltage margin withstands transient overvoltage up to 12V and 24V common in consumer electronic products.

Conclusion

Heketai provides AO4616A samples for engineering scheme evaluation.This integrated MOSFET offers a highly reliable solution for designs aiming to simplify BOM of battery protection circuits and minimize PCB footprint.Please contact our technical support team via official channels for datasheets and detailed application information.