Preface

With the rapid development of the new energy industry, silicon carbide (SiC) power devices are being widely adopted in charging piles, photovoltaic inverters and other fields. For engineers and procurement specialists, quickly selecting the optimal product from numerous models has become a core demand in daily component selection. This article sorts out Hekotai’s complete SiC product lineup, ranging from diodes to MOSFETs, helping you quickly locate the most suitable models for your applications.

Core Parameters for Device Selection

The following indicators are decisive factors in SiC component selection:

Voltage Rating: Mainstream applications are dominated by 650V and 1200V grades. 650V devices are suitable for low-input-voltage scenarios such as household fast chargers, while 1200V devices perfectly match high-voltage platforms including photovoltaic inverters and electric vehicle drive systems.

Current Capability: Select specifications based on actual load current with sufficient derating margin (a margin of 1.5 to 2 times is generally recommended).

On-resistance / Forward Voltage Drop: Directly determine the conduction loss of components. For MOSFETs, focus on RDS(on)​

; for diodes, focus on forward voltage (VF​

). Lower values deliver higher system efficiency.

Package Type: Determines heat dissipation performance and mounting methods, which shall be comprehensively evaluated combined with structural space constraints and thermal design requirements of specific application scenarios.

SiC Diode Selection Guide

Hekotai SiC diodes cover current ratings from 10A to 40A, with available packages including TO-220, TO-220F and TO-247.

Selection Recommendations by Current Rating

• 10A Grade (HSCF10D65)Suitable for low-power fast charging adapters, LED driving power supplies and other applications. The TO-220 package allows easy mounting of standard heat sinks.
• 15–20A Grade (HSCF15D65F / HSCF20D65F)This current range is the mainstream choice for charging pile modules. The fully encapsulated TO-220F package provides superior electrical isolation, ideal for Boost circuits and PFC rectification in 30–40kW power modules. The 20A model features a better forward voltage drop (Vf) of 1.35V, compared with 1.42V for the 15A version, effectively reducing conduction loss during long-term operation.
• 40A Grade (HSCH40D65)Optimized for input-side rectification in high-power charging pile modules and photovoltaic inverters. The TO-247 package delivers enhanced heat dissipation and higher junction temperature endurance, making it well-suited for high power-density designs.
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SiC MOSFET选型参考

SiC MOSFET在高频开关应用中表现出色，尤其适合需要高效率和高功率密度的场景。

Selection by On-Resistance and Current Rating

16mΩ Ultra-low On-Resistance (HSCH132M120)Featuring a high current rating of 132A and an ultra-low on-resistance of only 16mΩ, it serves as the optimal main switch device for high-power charging pile modules. For modules of 40kW and above, a single device can cover the main power loop and simplify circuit design.

28mΩ Medium On-Resistance (HSCH82M120)The combination of 82A current and 28mΩ on-resistance is widely adopted in mid-range charging pile modules (20–30kW) and photovoltaic inverters. Compared with 3-pin packages, the TO-247-4 package achieves lower drive resistance and delivers superior switching performance.

50mΩ Standard On-Resistance (HSCH33M120)With a 33A current rating, it is suitable for medium and low-power applications such as photovoltaic micro-inverters and energy storage inverters, or used as an auxiliary switch in high-power modules.

Application Scenario Reference

Charging Piles

For 30–40kW modules, it is recommended to adopt HSCF15D65F / HSCF20D65F SiC diodes paired with HSCH82M120 or HSCH132M120 MOSFETs. The low switching loss of SiC devices effectively boosts overall module efficiency and reduces the thermal load on heat dissipation systems.

Photovoltaic Inverters

For string inverters, HSCH132M120 or HSCH82M120 MOSFETs are recommended as power stage switches, matched with HSCH40D65 diodes for input rectification. The 1200V voltage rating provides sufficient safety margin against the open-circuit voltage of PV modules (typically below 1000V), making it the mainstream solution for such applications.

Key Selection Guidelines

1. Reserve sufficient voltage margin: PV systems require protection against lightning surges. 1200V MOSFETs offer higher voltage safety margin than 650V diodes.
2. Derate current by 1.5–2 times the actual load: Ensure overload capability and long-term operational reliability.
3. Co-design package and heat dissipation: The TO-247 package provides better thermal performance than TO-220F; forced air cooling or liquid cooling is recommended for high-load conditions.
4. Focus on Qg and Qc parameters: These parameters determine switching speed and drive loss. Low Qg/Qc components are preferred for high-frequency designs.

As an experienced partner specializing in electronic manufacturing and packaging & testing services, Hekotai not only supplies high-performance SiC power devices, but also delivers reliable supply chain support and customized packaging solutions backed by mature TO-247, TO-220 and other packaging processes and complete verification capabilities.

Hekotai continuously optimizes and expands its SiC product lineup, providing full-process technical support including device selection guidance and application solution customization. For project-specific demands, please feel free to contact our technical team for further communication.